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BSB028N06NN3 g opti mos?3 power-mosfet features ? optimized technology for dc/dc converters ? excellent gate charge x r ds(on) product (fom) ? superior thermal resistance ? dual sided cooling ? low parasitic inductance ? low profile (<0.7mm) ? n-channel, normal level ? 100% avalanche tested ? pb-free plating; rohs compliant ? qualified according to jedec 1) for target applications ? compatible with directfet? package mn footprint and outline 2) maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d v gs =10 v, t c =25?c 90 a v gs =10 v, t c =100?c 85 v gs =10 v, t a =25?c, r thja =58?k/w 2) 22 pulsed drain current 3) i d,pulse t c =25?c 360 avalanche energy, single pulse e as i d =30?a, r gs =25? w 590 mj gate source voltage v gs 20 v 1) j-std20 and jesd22 value 2) directfet? is a trademark of international rectfier corporation BSB028N06NN3 g uses directfet? technology licensed from international rectifier corporation v ds 60 v r ds(on),max 2.8 m w i d 90 a product summary type package outline marking BSB028N06NN3 g mg - wdson - 2 mn 0106 canpak tm m mg - wdson - 2 rev. 2.0 page 1 2014-04-17
BSB028N06NN3 g maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit power dissipation p tot t c =25?c 78 w t a =25 c, r thja =58?k/w 2) 2.2 operating and storage temperature t j , t stg -40 ... 150 c iec climatic category; din iec 68-1 55/150/56 parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc bottom - 1.0 - k/w top - - 1.6 device on pcb r thja 6 cm 2 cooling area 2) - - 58 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0?v, i d =1?ma 60 - - v gate threshold voltage v gs(th) v ds = v gs , i d =102?a 2 3 4 zero gate voltage drain current i dss v ds =60?v, v gs =0?v, t j =25?c - 0.1 10 a v ds =60?v, v gs =0?v, t j =125?c - 10 100 gate-source leakage current i gss v gs =20?v, v ds =0?v - 10 100 na drain-source on-state resistance r ds(on) v gs =10?v, i d =30?a - 2.2 2.8 m gate resistance r g - 0.5 - w transconductance g fs | v ds |>2| i d | r ds(on)max , i d =30?a 42 83 - s 3) see figure 3 for more detailed information value values 2) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. rev. 2.0 page 2 2014-04-17
BSB028N06NN3 g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 8800 12000 pf output capacitance c oss - 2100 2800 reverse transfer capacitance c rss - 64 - turn-on delay time t d(on) - 21 - ns rise time t r - 9 - turn-off delay time t d(off) - 38 - fall time t f - 6 - gate charge characteristics 5) gate to source charge q gs - 41 - nc gate to drain charge q gd - 8 - switching charge q sw - 23 - gate charge total q g - 108 143 gate plateau voltage v plateau - 4.6 - v output charge q oss v dd =30?v, v gs =0?v - 87 116 reverse diode diode continuous forward current i s - - 30 a diode pulse current i s,pulse - - 120 diode forward voltage v sd v gs =0?v, i f =30?a, t j =25?c - 0.8 1.2 v reverse recovery time t rr - 60 - ns reverse recovery charge q rr - 87 - nc 5) see figure 16 for gate charge parameter definition 4) see figure 13 for more detailed information t c =25?c values v gs =0?v, v ds =30?v, f =1?mhz v dd =30?v, v gs =10?v, i d =30?a, r g,ext =1.6? w v dd =30?v, i d =30?a, v gs =0?to?10?v v r =30?v, i f = i s , d i f /d t =100?a/s rev. 2.0 page 3 2014-04-17
BSB028N06NN3 g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 10 - 1 10 0 10 1 10 2 10 - 2 10 - 1 10 0 10 1 10 2 10 3 i d [a] v ds [v] limited by on - state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 - 2 10 - 1 10 0 10 1 z thjc [k/w] t p [s] 0 10 20 30 40 50 60 70 80 90 0 25 50 75 100 125 150 175 p tot [w] t c [ c] 0 10 20 30 40 50 60 70 80 90 100 0 25 50 75 100 125 150 175 i d [a] t c [ c] rev. 2.0 page 4 2014-04-17
BSB028N06NN3 g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 5 v 5.5 v 6 v 7 v 8 v 0 2 4 6 8 0 40 80 120 160 200 240 280 320 r ds(on) [m w ] i d [a] 10v 25 c 150 c 0 40 80 120 160 200 0 2 4 6 8 i d [a] v gs [v] 0 40 80 120 160 0 40 80 120 g fs [s] i d [a] 5 v 5.5 v 6 v 7 v 8 v 10 v 4.5v 0 40 80 120 160 200 240 280 320 360 0 1 2 3 i d [a] v ds [v] rev. 2.0 page 5 2014-04-17
BSB028N06NN3 g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =30 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ max 0 1 2 3 4 5 6 - 60 - 20 20 60 100 140 180 r ds(on) [m w ] t j [ c] 102 a 1020 a 0 1 2 3 4 - 60 - 20 20 60 100 140 180 v gs(th) [v] t j [ c] ciss coss crss 10 1 10 2 10 3 10 4 0 10 20 30 40 50 60 c [pf] v ds [v] 25 c 150 c 150 c 98% 25 c 98% 1 10 100 0.0 0.5 1.0 1.5 2.0 i f [a] v sd [v] rev. 2.0 page 6 2014-04-17
BSB028N06NN3 g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 w v gs =f( q gate ); i d =30 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 54 56 58 60 62 64 66 - 60 - 20 20 60 100 140 180 v br(dss) [v] t j [ c] 25 c 100 c 125 c 1 10 100 1 10 100 1000 10000 i av [a] t av [s] 12v 30 v 48 v 0 2 4 6 8 10 12 0 30 60 90 120 v gs [v] q gate [nc] rev. 2.0 page 7 2014-04-17 v gs q gate v gs(th) q g(th) q gs q gd q sw q g
BSB028N06NN3 g package outline canpak? m mg-wdson-2 rev. 2.0 page 8 2014-04-17
BSB028N06NN3 g canpak? m mg-wdson-2 dimensions in mm rev. 2.0 page 9 2014-04-17
BSB028N06NN3 g canpak? m mg-wdson-2 dimensions in mm raccomended stencil thikness 150 m rev. 2.0 page 10 2014-04-17
BSB028N06NN3 g published by infineon technologies ag 81726 munich, germany ? 2011 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 2.0 page 11 2014-04-17

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